Nonlocal Photorefractive Screening from Hot Electron Velocity Saturation in Semiconductors.
نویسندگان
چکیده
Intervalley scattering of hot electrons during high-field transport in transverse-field photorefractive quantum wells induces a nonlocal optical response in which photoinduced changes in the refractive index are spatially shifted relative to the optical stimulus, providing an avenue for optical gain. We demonstrate that the onset of the photorefractive phase shift coincides with the onset of velocity saturation. This nonlocal response is the high-resistivity consequence in semi-insulating semiconductors of the Gunn effect mechanism. [S0031-9007(96)01508-6]
منابع مشابه
Two-wave-mixing dynamics and nonlinear hot-electron transport in transverse-geometry photorefractive quantum wells studied by moving gratings
The photorefractive response to an applied electric field is measured in a photorefractive quantum well, providing evidence in favor of the nonlinear transport in the device due to the hot electrons. The reduced mobility of the hot electrons limits the drift length, and thereby limits fringe overshoot. Thus the nonlinear transport prevents the slowing down of the grating writing rate for increa...
متن کاملSaturation in Semiconductors
For different models of the electron-phonon interaction, the asymptotic behaviour of the moments of the stationary homogeneous solution of the linear Boltzmann equation is determined in the limit of a high external field. For Hilbert-Schmidt kernels of a finite rank, a result recently proven for kernels of rank one is found generally valid; as a consequence velocity saturation is excluded for t...
متن کاملNumerical method for an analysis of nonlinear light propagation in photorefractive media--time nonlocal approach.
Nonlinear light propagation in photorefractive media can be analyzed by numerical methods. The presented numerical approach has regard to the effects of time nonlocality. Two algorithms are presented, and compared in terms of physical results and computing times. The possibility to address the issue of time nonlocality in two ways is attributed to the fact that, it is possible to completely sep...
متن کاملHot phonon effect on electron velocity saturation in GaN: A second look
A theoretical model is developed for electron velocity saturation in high power GaN transistors. It is shown that electron velocity at high electric fields is reduced due to heating of electron gas since the high density of nonequilibrium LO phonons cannot efficiently transfer heat to the lattice. However, the resulting degradation of electron velocity is found to be weaker than previously repo...
متن کاملHigh-field transport in two-dimensional graphene
Transport of carriers in two-dimensional graphene at high electric fields is investigated by combining semianalytical and Monte Carlo methods. A semianalytical high-field transport model based on the high rate of optical phonon emission provides useful estimates of the saturation currents in graphene. For developing a more accurate picture, the nonequilibrium (hot) phonon effect and the role of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 77 20 شماره
صفحات -
تاریخ انتشار 1996